Part Image

IXFH15N100Q3 - LITTELFUSE

Description: IXYS IXFH15N100Q3 N-channel MOSFET Transistor, 15 A, 1000 V, 3-Pin TO-247

Download IXFH15N100Q3 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IXFH15N100Q3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-3
click to zoom
3D Models
IXFH15N100Q3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247-3
click to zoom

IXFH15N100Q3 Details

  • Manufacturer Part Number:

    IXFH15N100Q3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    15 A

  • Drain-source On Resistance-Max:

    1.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    24 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    690 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH15N100Q3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH15N100Q3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH15N100Q3 is rated for operation up to 150°C, but it's recommended to derate the power dissipation according to the temperature derating curve in the datasheet.
  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure the device is operated within its recommended operating conditions.
  • Yes, IXFH15N100Q3 is designed to withstand vibrations up to 10g, but it's recommended to follow proper mounting and soldering techniques to ensure the device remains securely attached to the PCB.
  • The typical lead time for IXFH15N100Q3 varies depending on the supplier and the quantity required. It's recommended to check with authorized distributors or the manufacturer for the most up-to-date lead time information.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXFH15N100Q3 Overview

Use the download button to access the IXFH15N100Q3 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFH1, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFH15N100Q3

Showing 0 results

IXFH15N100Q3 Alternates

Showing results

Image Part Number Model
Part Image IXFH15N100P Littelfuse Inc

Power Field-Effect Transistor, 15A I(D), 1000V, 0.76ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD