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IXFH180N20X3 - LITTELFUSE

Description: Trans MOSFET N-CH 200V 180A 3-Pin(3+Tab) TO-247

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IXFH180N20X3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH180N20X3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH180N20X3 Details

  • Manufacturer Part Number:

    IXFH180N20X3

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2200 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    735 W

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH180N20X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH180N20X3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While the IXFH180N20X3 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and thermal management. However, it's essential to consult with Littelfuse's application engineers to ensure the device meets the specific requirements of your high-frequency application.
  • To ensure the reliability of the IXFH180N20X3 in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the device within its recommended operating temperature range of -40°C to 150°C.
  • Yes, the IXFH180N20X3 can be paralleled to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients. It's recommended to consult with Littelfuse's application engineers to ensure proper paralleling and to discuss any specific requirements.
  • The recommended gate drive voltage for the IXFH180N20X3 is 10-15V, with a maximum gate drive voltage of 20V. It's essential to ensure that the gate drive voltage is within the recommended range to prevent damage to the device.

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IXFH180N20X3 Overview

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