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IXFH32N100X - LITTELFUSE

Description: Discmsft Nch Ultrjnctn Xclass To-247Ad/Tube |Littelfuse IXFH32N100X

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IXFH32N100X - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH32N100X - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH32N100X Details

  • Manufacturer Part Number:

    IXFH32N100X

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    32 A

  • Drain-source On Resistance-Max:

    0.22 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    64 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH32N100X Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH32N100X is a pad layout with a minimum size of 2.5mm x 2.5mm, with a 1.5mm x 1.5mm thermal pad in the center. The pad layout should be designed to accommodate the device's thermal characteristics and ensure good thermal conduction.
  • To ensure the reliability of the IXFH32N100X in high-temperature applications, it is recommended to follow proper derating guidelines, ensure good thermal management, and use a suitable thermal interface material (TIM) to minimize thermal resistance. Additionally, the device should be operated within its specified temperature range and derated accordingly.
  • The maximum surge current rating for the IXFH32N100X is 100A for 10ms, as specified in the datasheet. However, it is recommended to consult with Littelfuse Inc. or a qualified engineer to determine the device's surge current capability for specific application requirements.
  • Yes, the IXFH32N100X can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices.
  • The recommended storage and handling procedure for the IXFH32N100X is to store the devices in their original packaging, away from direct sunlight and moisture, and to handle them with anti-static precautions to prevent electrostatic discharge (ESD) damage.

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IXFH32N100X Overview

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