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IXFH34N65X2 - LITTELFUSE

Description: N-Channel 650 V 34A (Tc) 540W (Tc) Through Hole TO-247 (IXTH)

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IXFH34N65X2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247(IXFH)
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IXFH34N65X2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247(IXFH)
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IXFH34N65X2 Details

  • Manufacturer Part Number:

    IXFH34N65X2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    34 A

  • Drain-source On Resistance-Max:

    0.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    540 W

  • Pulsed Drain Current-Max (IDM):

    68 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH34N65X2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH34N65X2 is a 5-pin TO-220 package with a minimum pad size of 1.5mm x 1.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure reliable operation in high-temperature environments, it's essential to provide adequate heat sinking, ensure good thermal conductivity between the device and the heat sink, and follow the recommended operating temperature range of -55°C to 150°C.
  • The maximum allowed voltage transient for the IXFH34N65X2 is 80V, and it's recommended to use a TVS diode or a voltage clamp to protect the device from voltage transients exceeding this value.
  • Yes, the IXFH34N65X2 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched, and the thermal management is adequate to prevent thermal runaway.
  • The recommended gate drive voltage for the IXFH34N65X2 is 10V to 15V, and it's essential to ensure that the gate drive voltage is within this range to prevent device damage or malfunction.

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IXFH34N65X2 Overview

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