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IXFH36N60P - LITTELFUSE

Description: Trans MOSFET N-CH 600V 36A 3-Pin(3+Tab) TO-247AD

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Symbol
IXFH36N60P - LITTELFUSE - PCB symbol
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PCB Footprints
IXFH36N60P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
IXFH36N60P - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247
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IXFH36N60P Details

  • Manufacturer Part Number:

    IXFH36N60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH36N60P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH36N60P is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
  • Yes, IXFH36N60P is suitable for high-frequency switching applications up to 100 kHz. However, it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • The junction-to-case thermal resistance (RθJC) for IXFH36N60P can be calculated using the formula: RθJC = (Tj - Tc) / Pd, where Tj is the junction temperature, Tc is the case temperature, and Pd is the power dissipation. The datasheet provides the maximum junction temperature (Tj) and the maximum power dissipation (Pd) values.
  • Yes, IXFH36N60P is compatible with lead-free soldering processes. Littelfuse Inc. ensures that their products meet the requirements of the RoHS (Restriction of Hazardous Substances) directive.
  • The recommended gate drive voltage for IXFH36N60P is between 10 V and 15 V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements and recommendations.

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IXFH36N60P Overview

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