Part Image

IXFH44N50P - LITTELFUSE

Description: IXYS SEMICONDUCTOR - IXFH44N50P - MOSFET Transistor, PolarFET, N Channel, 44 A, 500 V, 0.14 ohm, 10 V, 5 V

Download IXFH44N50P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IXFH44N50P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
click to zoom
3D Models
IXFH44N50P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXFH) Outline_2021
click to zoom

IXFH44N50P Details

  • Manufacturer Part Number:

    IXFH44N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    44 A

  • Drain-source On Resistance-Max:

    0.14 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    110 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH44N50P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH44N50P is a standard SOT-227 package footprint with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH44N50P is rated for operation up to 150°C, but it's recommended to derate the current and voltage ratings according to the temperature derating curve provided in the datasheet.
  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure that the device is operated within its recommended operating conditions and ratings.
  • Yes, IXFH44N50P is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to evaluate the device's performance and losses using simulation tools and/or prototype testing.
  • The recommended gate drive voltage for IXFH44N50P is 10-15V, but it's recommended to consult the datasheet and application notes for specific gate drive requirements and recommendations.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXFH44N50P Overview

Use the download button to access the IXFH44N50P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFH4, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFH44N50P

Showing 0 results