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IXFH50N60P3 - LITTELFUSE

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IXFH50N60P3 Details

  • Manufacturer Part Number:

    IXFH50N60P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    50 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2.5 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1040 W

  • Pulsed Drain Current-Max (IDM):

    125 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH50N60P3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH50N60P3 is a TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • While the IXFH50N60P3 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz. For higher frequencies, consider using a dedicated high-frequency IGBT or a MOSFET.
  • To ensure proper cooling, provide a heat sink with a thermal resistance of ≤ 1°C/W and a minimum surface area of 20mm x 20mm. Apply a thermal interface material (TIM) with a thermal conductivity of ≥ 1 W/m-K between the device and the heat sink. Ensure good airflow around the heat sink and avoid blocking the airflow path.
  • The maximum allowed voltage transient for the IXFH50N60P3 is ± 10% of the rated voltage (600V) for a duration of ≤ 100ms. Exceeding this limit may damage the device or affect its reliability.
  • Yes, you can use multiple IXFH50N60P3 devices in parallel to increase current handling. However, ensure that each device has its own gate resistor and that the gate signals are properly synchronized to avoid shoot-through currents. Also, consider the thermal management and PCB layout to ensure even current distribution.

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IXFH50N60P3 Overview

Use the download button to access the IXFH50N60P3 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Part Image IXFT50N60P3 Littelfuse Inc

Power Field-Effect Transistor, 50A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA