Please enter a minimum 3 letters or numbers
Technical Content
Part Image

IXFH52N50P2 - LITTELFUSE

Description: MOSFET N-CH 500V 52A TO247AD

Download IXFH52N50P2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
Send part feedback
Symbol
IXFH52N50P2 - LITTELFUSE - PCB symbol
click to zoom
PCB Footprints
IXFH52N50P2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFH110N10P-96
click to zoom
3D Models
IXFH52N50P2 - LITTELFUSE - 3D model - Transistor Outline, Vertical - IXFH110N10P-96
click to zoom

IXFH52N50P2 Details

  • Manufacturer Part Number:

    IXFH52N50P2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    960 W

  • Pulsed Drain Current-Max (IDM):

    150 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH52N50P2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH52N50P2 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, IXFH52N50P2 is rated for operation up to 150°C, but it's recommended to derate the current and voltage ratings according to the temperature derating curve provided in the datasheet.
  • To ensure reliability, follow proper soldering and assembly procedures, use a clean and dry environment, and avoid exceeding the recommended operating conditions. Additionally, consider using a fuse with a built-in thermal protection device (TPD) for added reliability.
  • Yes, IXFH52N50P2 is rated for up to 50V, but it's recommended to ensure that the voltage rating is not exceeded, and to consider using a fuse with a higher voltage rating if necessary.
  • Select a fuse value that is based on the maximum expected current in your application, taking into account factors such as inrush current, steady-state current, and fault current. Consult the datasheet and application notes for guidance on fuse selection.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXFH52N50P2 Overview

Use the download button to access the IXFH52N50P2 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFH5, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFH52N50P2

Showing 0 results

Part Image

← Prev Next →
About Us Contact Us Terms of Service Do not sell or share my personal information Privacy Policy Digital Services Act Library Loader Twitter LinkedIn

All content Copyright © 2020, Supplyframe.com. All rights reserved. Back to top ↑