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IXFH56N30X3 - LITTELFUSE

Description: MOSFET MSFT N-CH ULTRA JNCT X3 3&44

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IXFH56N30X3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH56N30X3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247  height 5.21
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IXFH56N30X3 Details

  • Manufacturer Part Number:

    IXFH56N30X3

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    56 A

  • Drain-source On Resistance-Max:

    0.027 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    3 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    320 W

  • Pulsed Drain Current-Max (IDM):

    112 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH56N30X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH56N30X3 is a TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH56N30X3 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
  • To ensure optimal thermal performance, it is recommended to use a heat sink with a thermal resistance of less than 1°C/W and to apply a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
  • Yes, IXFH56N30X3 is compatible with lead-free soldering processes and meets the requirements of RoHS and WEEE directives.
  • The maximum allowed voltage derating for IXFH56N30X3 is 80% of the maximum rated voltage, which is 300V for this device.

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IXFH56N30X3 Overview

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