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IXFH58N20 - LITTELFUSE

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IXFH58N20 Details

  • Manufacturer Part Number:

    IXFH58N20

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    58 A

  • Drain-source On Resistance-Max:

    0.04 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    285 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    232 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Max (toff):

    115 ns

  • Turn-on Time-Max (ton):

    45 ns

IXFH58N20 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFH58N20 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • While the IXFH58N20 is primarily designed for low-frequency applications, it can be used in high-frequency applications up to 100 kHz with proper PCB layout and design considerations. However, it's essential to consult with Littelfuse's application engineers to ensure the device meets the specific requirements of your high-frequency application.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should have a minimum thermal resistance of 10°C/W, and the TIM should have a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The maximum allowed case temperature for the IXFH58N20 is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance.
  • Yes, you can use multiple IXFH58N20 devices in parallel to increase current handling. However, it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal mismatch between the devices. Consult with Littelfuse's application engineers for guidance on parallel configuration design.

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IXFH58N20 Overview

Use the download button to access the IXFH58N20 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Image Part Number Model
Part Image IXFH58N20 IXYS Corporation

Power Field-Effect Transistor, 58A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247