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IXFH6N120P - LITTELFUSE

Description: DISCMOSFETN-CH HIPERFET-POLAR TO-247AD / TUBE

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PCB Footprints
IXFH6N120P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247-2021
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3D Models
IXFH6N120P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247-2021
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IXFH6N120P Details

  • Manufacturer Part Number:

    IXFH6N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    7

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.0024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    18 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFH6N120P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFH6N120P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXFH6N120P is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast recovery time.
  • To ensure reliable operation of IXFH6N120P in high-temperature environments, it is recommended to derate the device's power rating according to the temperature derating curve provided in the datasheet, and to ensure good thermal management through proper heat sinking and airflow.
  • Yes, IXFH6N120P is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.
  • The recommended gate drive voltage for IXFH6N120P is 10-15V, with a maximum gate drive current of 5A.

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IXFH6N120P Overview

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