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IXFK120N65X2 - LITTELFUSE

Description: Trans MOSFET N-CH 650V 120A 3-Pin(3+Tab) TO-264

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IXFK120N65X2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFK120N65X2
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IXFK120N65X2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFK120N65X2
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IXFK120N65X2 Details

  • Manufacturer Part Number:

    IXFK120N65X2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.5 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1250 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK120N65X2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK120N65X2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 6.5mm x 6.5mm.
  • Yes, the IXFK120N65X2 is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching losses, thermal performance, and layout to ensure reliable operation.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of less than 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the thermal impedance of the device.
  • The recommended gate drive voltage for the IXFK120N65X2 is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but it may also increase power consumption.
  • Yes, you can parallel multiple IXFK120N65X2 devices to increase current handling, but it's crucial to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent uneven current sharing.

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IXFK120N65X2 Overview

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Part Image IXFK120N65X2 IXYS Corporation

Power Field-Effect Transistor, 120A I(D), 650V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA