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IXFK140N25T - LITTELFUSE

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IXFK140N25T Details

  • Manufacturer Part Number:

    IXFK140N25T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    140 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    185 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    960 W

  • Pulsed Drain Current-Max (IDM):

    380 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK140N25T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK140N25T is a TO-247 package with a minimum pad size of 5.5mm x 3.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and electrical connection.
  • To ensure proper cooling, it's recommended to use a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The IXFK140N25T can withstand voltage transients up to 400V for a duration of 10ms. However, it's recommended to limit the voltage transients to 300V or less to ensure the device operates within its safe operating area (SOA).
  • Yes, the IXFK140N25T can be used in a parallel configuration to increase the current handling capability. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and the gate drive signals are properly synchronized to avoid uneven current sharing.
  • The recommended gate drive voltage for the IXFK140N25T is between 10V and 15V. A higher gate drive voltage can reduce the switching losses, but it may also increase the gate oxide stress and reduce the device's lifetime.

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IXFK140N25T Overview

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