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IXFK160N30T - LITTELFUSE

Description: Trans MOSFET N-CH 300V 160A 3-Pin(3+Tab) TO-264

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PCB Footprints
IXFK160N30T - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFK160N30T*
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3D Models
IXFK160N30T - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFK160N30T*
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IXFK160N30T Details

  • Manufacturer Part Number:

    IXFK160N30T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    160 A

  • Drain-source On Resistance-Max:

    0.019 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1390 W

  • Pulsed Drain Current-Max (IDM):

    440 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK160N30T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK160N30T is a TO-247-3L package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal vias and a copper pour to dissipate heat efficiently.
  • The maximum allowed voltage transient for the IXFK160N30T is 400V, with a maximum duration of 10ms. Exceeding this limit may damage the device.
  • Yes, the IXFK160N30T can be used in a parallel configuration, but it is essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive signals are synchronized to prevent uneven current sharing.
  • The recommended gate drive voltage for the IXFK160N30T is between 10V and 15V, with a maximum gate current of 5A. A higher gate drive voltage may be required for high-frequency applications.

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IXFK160N30T Overview

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