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IXFK180N07 - LITTELFUSE

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IXFK180N07 - LITTELFUSE  - 3D model
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IXFK180N07 Details

  • Manufacturer Part Number:

    IXFK180N07

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.1

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    70 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.006 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    2500 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    568 W

  • Pulsed Drain Current-Max (IDM):

    720 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK180N07 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK180N07 is a standard SOT-227 package footprint with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • To ensure proper cooling, a heat sink with a thermal resistance of 1°C/W or lower is recommended. Additionally, a thermal interface material (TIM) with a thermal conductivity of 1 W/m-K or higher should be used to fill the gap between the device and the heat sink.
  • The maximum allowed voltage transient for the IXFK180N07 is 400V for a duration of 100ms, as specified in the datasheet. Exceeding this limit may damage the device.
  • Yes, the IXFK180N07 is suitable for high-reliability applications. It is manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it is essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • To protect the IXFK180N07 from EOS, it is recommended to use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) in parallel with the device. Additionally, a fuse or a current-limiting resistor can be used in series with the device to limit the current in case of an overvoltage event.

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IXFK180N07 Overview

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Part Image IXFK180N07 IXYS Corporation

Power Field-Effect Transistor, 180A I(D), 70V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA