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IXFK180N10 - LITTELFUSE

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IXFK180N10 Details

  • Manufacturer Part Number:

    IXFK180N10

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    TO-264, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1940 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    560 W

  • Pulsed Drain Current-Max (IDM):

    720 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK180N10 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK180N10 is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While the IXFK180N10 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies. For higher frequencies, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure proper cooling, make sure to provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of ≤ 0.1°C-in²/W. Additionally, ensure good airflow around the heat sink and follow the manufacturer's recommended thermal design guidelines.
  • The IXFK180N10 can withstand voltage transients up to 1.5 times the maximum rated voltage (1800V) for a duration of ≤ 10 μs. However, it's recommended to limit voltage transients to ≤ 1.2 times the maximum rated voltage to ensure device reliability and prevent potential damage.
  • Yes, the IXFK180N10 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current. Additionally, consider the thermal implications of paralleling devices and ensure that the heat sink is designed to handle the increased power dissipation.

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IXFK180N10 Overview

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