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IXFK180N25T - LITTELFUSE

Description: Trans MOSFET N-CH 250V 180A 3-Pin(3+Tab) TO-264

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PCB Footprints
IXFK180N25T - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXFK180N25T*
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3D Models
IXFK180N25T - LITTELFUSE  - 3D model - Transistor Outline, Vertical - IXFK180N25T*
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IXFK180N25T Details

  • Manufacturer Part Number:

    IXFK180N25T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    180 A

  • Drain-source On Resistance-Max:

    0.0129 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    47 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1390 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK180N25T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK180N25T is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • While the IXFK180N25T is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the IGBT and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's thermal pad, and ensure the heat sink is properly secured to the PCB. A heat sink with a thermal resistance of 1-2°C/W is recommended.
  • The IXFK180N25T can withstand voltage transients up to 400V for a duration of 100ns. However, it's essential to ensure that the device is not exposed to repetitive voltage transients, as this can lead to reduced reliability and lifespan.
  • Yes, the IXFK180N25T can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched, and the gate drive signals are synchronized to prevent current imbalance and oscillations.

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IXFK180N25T Overview

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