Part Image

IXFK26N120P - LITTELFUSE

Description: IXYS IXFK26N120P N-channel MOSFET Transistor, 26 A, 1200 V, 3-Pin TO-264

Download IXFK26N120P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IXFK26N120P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (IXFK)_1
click to zoom
3D Models
IXFK26N120P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 (IXFK)_1
click to zoom

IXFK26N120P Details

  • Manufacturer Part Number:

    IXFK26N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    26 A

  • Drain-source On Resistance-Max:

    0.46 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    960 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK26N120P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK26N120P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • While the IXFK26N120P is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The IXFK26N120P can withstand voltage transients up to 1.5 times the maximum rated voltage (Vces) for a duration of less than 10 μs. However, it's recommended to limit voltage transients to 1.2 times the maximum rated voltage to ensure reliable operation and prevent damage to the device.
  • Yes, the IXFK26N120P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive signals are properly synchronized to prevent uneven current sharing and potential damage to the devices.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IXFK26N120P Overview

Use the download button to access the IXFK26N120P schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFK2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFK26N120P

Showing 0 results