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IXFK320N17T2 - LITTELFUSE

Description: MOSFET N-CH 170V 320A TO264AA

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IXFK320N17T2 - LITTELFUSE  - 3D model
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IXFK320N17T2 Details

  • Manufacturer Part Number:

    IXFK320N17T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    170 V

  • Drain Current-Max (ID):

    320 A

  • Drain-source On Resistance-Max:

    0.0052 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    410 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1670 W

  • Pulsed Drain Current-Max (IDM):

    800 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK320N17T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK320N17T2 is a standard TO-220 package with a minimum pad size of 70mm² and a maximum pad size of 100mm². It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes to ensure proper thermal performance and reliability.
  • While the IXFK320N17T2 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 20 kHz. The device is optimized for high-power, low-frequency switching applications such as motor control, power supplies, and renewable energy systems. For high-frequency switching applications, consider using a dedicated high-frequency IGBT or MOSFET device.
  • To ensure proper cooling, follow the thermal management guidelines provided in the datasheet. Use a heat sink with a thermal resistance of ≤ 1°C/W, and apply a thermal interface material (TIM) with a thermal conductivity of ≥ 5 W/m-K. Ensure good airflow around the heat sink, and consider using a fan or other cooling mechanisms for high-power applications.
  • Yes, you can parallel multiple IXFK320N17T2 devices to increase current handling, but it's crucial to ensure that the devices are properly matched and synchronized to avoid current imbalance and thermal runaway. Follow the application notes and guidelines provided by Littelfuse Inc for paralleling IGBT devices.
  • The recommended gate drive voltage for the IXFK320N17T2 is between 10V and 15V, with a maximum gate drive voltage of 20V. Using a higher gate drive voltage can improve switching performance, but it may also increase power losses and reduce device reliability.

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IXFK320N17T2 Overview

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