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IXFK360N15T2 - LITTELFUSE

Description: Gate Drivers GigaMOS Trench T2 HiperFET PWR MOSFET

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PCB Footprints
IXFK360N15T2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-264 (IXFK)
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3D Models
IXFK360N15T2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-264 (IXFK)
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IXFK360N15T2 Details

  • Manufacturer Part Number:

    IXFK360N15T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    360 A

  • Drain-source On Resistance-Max:

    0.004 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    665 pF

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1670 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK360N15T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK360N15T2 is a TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • While the IXFK360N15T2 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for 20-50 kHz switching frequencies, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow path.
  • The maximum allowed voltage transient for the IXFK360N15T2 is 1.5 times the rated voltage (1500V) for a duration of less than 10µs. Exceeding this limit may damage the device or reduce its reliability.
  • Yes, the IXFK360N15T2 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive and control circuits are designed to handle the increased current and voltage stresses.

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IXFK360N15T2 Overview

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