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IXFK80N50P - LITTELFUSE

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IXFK80N50P Details

  • Manufacturer Part Number:

    IXFK80N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    200 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK80N50P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK80N50P is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • While the IXFK80N50P is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 100 kHz. The device is optimized for switching frequencies up to 50 kHz, and using it at higher frequencies may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to prevent thermal buildup.
  • The IXFK80N50P can withstand voltage transients up to 1.5 times the maximum rated voltage (Vces) for a duration of less than 10 μs. However, it's recommended to limit voltage transients to 1.2 times Vces to ensure reliable operation and prevent damage to the device.
  • Yes, the IXFK80N50P can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive circuitry is designed to handle the increased current. Additionally, proper thermal management is crucial to prevent thermal runaway and ensure reliable operation.

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IXFK80N50P Overview

Use the download button to access the IXFK80N50P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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Image Part Number Model
Part Image IXFK80N50P IXYS Corporation

Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image IXFK80N50Q3 Littelfuse Inc

Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA

Part Image IXFK80N50Q3 IXYS Corporation

Power Field-Effect Transistor, 80A I(D), 500V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA