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IXFK94N50P2 - LITTELFUSE

Description: N-Channel 500 V 94A (Tc) 1300W (Tc) Through Hole TO-264AA (IXFK)

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PCB Footprints
IXFK94N50P2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO 264
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3D Models
IXFK94N50P2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO 264
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IXFK94N50P2 Details

  • Manufacturer Part Number:

    IXFK94N50P2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.18

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    94 A

  • Drain-source On Resistance-Max:

    0.055 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-264AA

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1300 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFK94N50P2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFK94N50P2 is a standard TO-220 package footprint with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation of the IXFK94N50P2 in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
  • The maximum allowed voltage transient for the IXFK94N50P2 is 50V for a duration of 10ms, as specified in the datasheet. Exceeding this limit may damage the device.
  • Yes, the IXFK94N50P2 can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
  • The recommended gate drive voltage for the IXFK94N50P2 is between 10V and 15V, with a maximum gate drive current of 1A. Exceeding this limit may damage the device.

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IXFK94N50P2 Overview

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