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IXFN100N50P - LITTELFUSE

Description: N-Ch 500V 90A 1040W 0,049R SOT227B

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IXFN100N50P Details

  • Manufacturer Part Number:

    IXFN100N50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.22

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.049 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    250 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN100N50P Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IXFN100N50P is -40°C to 150°C.
  • Yes, the IXFN100N50P is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The recommended gate drive voltage for the IXFN100N50P is 10-15V, but it can operate with gate drive voltages as low as 5V.
  • Yes, the IXFN100N50P can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and the gate drive is synchronized to prevent shoot-through currents.
  • The typical turn-on time for the IXFN100N50P is around 10-20ns, and the typical turn-off time is around 20-30ns.

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IXFN100N50P Overview

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Part Image IXFN100N50P IXYS Corporation

Power Field-Effect Transistor, 90A I(D), 500V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET