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IXFN132N50P3 - LITTELFUSE

Description: Discrete Semiconductor Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET

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IXFN132N50P3 - LITTELFUSE  - 3D model
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IXFN132N50P3 Details

  • Manufacturer Part Number:

    IXFN132N50P3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227B, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATE, UL RECOGNIZED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    112 A

  • Drain-source On Resistance-Max:

    0.039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    12 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1500 W

  • Pulsed Drain Current-Max (IDM):

    330 A

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN132N50P3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN132N50P3 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFN132N50P3 is rated for operation up to 150°C, but it's recommended to derate the power dissipation according to the temperature derating curve provided in the datasheet.
  • To ensure reliability, follow proper PCB design and layout guidelines, ensure proper thermal management, and avoid exceeding the maximum ratings and operating conditions specified in the datasheet.
  • Yes, the IXFN132N50P3 is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to evaluate the device's performance and losses at the specific frequency of operation.
  • The recommended gate drive voltage for the IXFN132N50P3 is 10-15V, but it can be operated with a gate drive voltage as low as 6V, depending on the specific application requirements.

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IXFN132N50P3 Overview

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