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IXFN140N20P - LITTELFUSE

Description: IXYS IXFN140N20P N-channel MOSFET Transistor & Diode, 115 A, 200 V, 4-Pin SOT-227B

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IXFN140N20P - LITTELFUSE  - 3D model
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IXFN140N20P Details

  • Manufacturer Part Number:

    IXFN140N20P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    115 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    280 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN140N20P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN140N20P is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
  • While IXFN140N20P is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz due to its relatively high switching losses. For high-frequency applications, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure reliable operation of IXFN140N20P in high-temperature environments, make sure to follow the recommended thermal management guidelines, including using a heat sink with a thermal resistance of ≤ 1°C/W and ensuring good airflow around the device.
  • The maximum allowed voltage transient for IXFN140N20P is ± 10% of the maximum rated voltage (200V) for a duration of ≤ 100 ns. Exceeding this limit may cause device damage or failure.
  • Yes, IXFN140N20P can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive signals are properly synchronized to prevent uneven current sharing.

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IXFN140N20P Overview

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