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- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXFN170N30P
- Part Number IXFN170N30P
- Manufacturer LITTELFUSE
- Pin Count 123
- Part Category MOSFET (N-Channel)
- Last Modified Date Feb 22, 2023 3:27 PM UTC
- Pinout / Pin List Click Here (Member Only)
IXFN170N30P Details
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Manufacturer Part Number:
IXFN170N30P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6.22
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
5000 mJ
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Case Connection:
ISOLATED
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
300 V
IXFN170N30P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for the IXFN170N30P is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils. It's recommended to follow the PCB layout guidelines provided in the Littelfuse application note AN9313.
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The IXFN170N30P is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures. Consult the thermal derating curve in the datasheet to determine the maximum power dissipation at your operating temperature.
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To ensure proper soldering, follow the recommended soldering profile provided in the Littelfuse application note AN10264. Use a solder with a melting point above 217°C and avoid applying excessive force or vibration during the soldering process.
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The recommended gate drive voltage for the IXFN170N30P is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the datasheet and application notes for more information.
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Yes, the IXFN170N30P can be used in a parallel configuration, but it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized. Consult the Littelfuse application note AN10333 for more information on paralleling MOSFETs.
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IXFN170N30P Overview
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