Part Image

IXFN200N10P - LITTELFUSE

Description: Trans MOSFET N-CH 100V 200A 4-Pin SOT-227B

Download IXFN200N10P Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXFN200N10P - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXFN200N10P Details

  • Manufacturer Part Number:

    IXFN200N10P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.3

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    4000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    400 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN200N10P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFN200N10P is a standard TO-220 package with a minimum pad size of 70 mils x 70 mils and a thermal pad size of 100 mils x 100 mils.
  • Yes, the IXFN200N10P is rated for operation up to 150°C, but it's recommended to derate the power dissipation according to the temperature derating curve provided in the datasheet.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, ensure good airflow around the heat sink.
  • The maximum allowed voltage transient for the IXFN200N10P is 400V, but it's recommended to limit the voltage transient to 300V to ensure reliable operation.
  • Yes, the IXFN200N10P can be used in a parallel configuration, but it's recommended to ensure that the devices are matched in terms of their electrical characteristics and that the current sharing is balanced.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXFN200N10P Overview

Use the download button to access the IXFN200N10P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXFN2, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXFN200N10P

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview