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IXFN30N120P - LITTELFUSE

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IXFN30N120P - LITTELFUSE  - 3D model
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IXFN30N120P Details

  • Manufacturer Part Number:

    IXFN30N120P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.35 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    890 W

  • Pulsed Drain Current-Max (IDM):

    75 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    NICKEL

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN30N120P Frequently Asked Questions (FAQs)

  • The maximum surge current rating of the IXFN30N120P is 120A for 10ms, as specified in the datasheet. However, it's essential to note that the device can handle higher surge currents for shorter durations, but the exact rating depends on the specific application and operating conditions.
  • The IXFN30N120P is designed for high-frequency switching applications, but its behavior under these conditions is not explicitly stated in the datasheet. In general, the device's switching characteristics, such as rise and fall times, can be affected by the operating frequency, voltage, and current. It's recommended to consult with Littelfuse's application engineers or perform thorough testing to ensure the device meets the specific application requirements.
  • The datasheet provides general guidelines for PCB layout and thermal management, but specific recommendations may vary depending on the application and operating conditions. It's essential to follow best practices for PCB design, such as minimizing thermal resistance, using thermal vias, and ensuring adequate copper area for heat dissipation. Additionally, consulting with Littelfuse's application engineers or performing thermal simulations can help optimize the design for the specific application.
  • Yes, the IXFN30N120P can be used in parallel to increase current handling capability, but it's crucial to ensure that the devices are properly matched and synchronized to avoid uneven current sharing. Additionally, the user should carefully evaluate the thermal management and PCB layout to ensure that the devices operate within their specified ratings. It's recommended to consult with Littelfuse's application engineers to determine the feasibility and optimal implementation of parallel operation for the specific application.
  • The datasheet may not provide explicit reliability and MTBF ratings for the IXFN30N120P. However, Littelfuse Inc. typically provides reliability data and MTBF ratings for their products upon request. It's recommended to contact Littelfuse's customer support or application engineers to obtain the relevant information for the specific application and operating conditions.

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IXFN30N120P Overview

Use the download button to access the IXFN30N120P 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
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