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IXFN400N15X3 - LITTELFUSE

Description: DISCMSFT NCHULTRJNCTX3CLAS SOT-227B(MINI / TUBE

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IXFN400N15X3 - LITTELFUSE  - 3D model
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IXFN400N15X3 Details

  • Manufacturer Part Number:

    IXFN400N15X3

  • Part Life Cycle Code:

    Active

  • Package Description:

    SOT-227, 4 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    150 V

  • Drain Current-Max (ID):

    400 A

  • Drain-source On Resistance-Max:

    0.0025 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    140 pF

  • JESD-30 Code:

    R-PUFM-X4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    695 W

  • Pulsed Drain Current-Max (IDM):

    900 A

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFN400N15X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFN400N15X3 is a standard TO-247 package with a minimum pad size of 6.5mm x 4.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, IXFN400N15X3 is suitable for high-frequency switching applications up to 100 kHz due to its low gate charge and fast switching times. However, it's essential to ensure proper gate drive and layout to minimize ringing and EMI.
  • To ensure reliable operation of IXFN400N15X3 in high-temperature environments, it's essential to provide adequate heat sinking, ensure proper thermal interface material, and follow the recommended derating curves for junction temperature and power dissipation.
  • Yes, you can parallel multiple IXFN400N15X3 devices to increase current handling, but it's crucial to ensure that each device has its own gate drive and that the devices are properly matched to minimize current imbalance and oscillations.
  • The recommended gate drive voltage for IXFN400N15X3 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance but may also increase power losses.

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IXFN400N15X3 Overview

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