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IXFP90N20X3 - LITTELFUSE

Description: MOSFET 200V/90A X3-Class HiPerFET N-Channel Enhancement Mode Avalanche Rated

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PCB Footprints
IXFP90N20X3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220(IXTP)
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3D Models
IXFP90N20X3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220(IXTP)
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IXFP90N20X3 Details

  • Manufacturer Part Number:

    IXFP90N20X3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.92

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    90 A

  • Drain-source On Resistance-Max:

    0.0128 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    4 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    390 W

  • Pulsed Drain Current-Max (IDM):

    220 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFP90N20X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFP90N20X3 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • While the IXFP90N20X3 is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz. The device is optimized for low-frequency switching applications, and high-frequency operation may lead to increased losses and reduced reliability.
  • To ensure proper cooling, it's essential to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink to prevent thermal buildup.
  • The maximum allowed voltage transient for the IXFP90N20X3 is 30% above the maximum rated voltage (V CES) for a duration of less than 10 μs. Exceeding this limit may cause damage to the device or affect its reliability.
  • Yes, the IXFP90N20X3 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are matched in terms of their electrical characteristics, and that the gate drive and control circuits are designed to handle the increased current and voltage stresses.

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IXFP90N20X3 Overview

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