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IXFR140N30P - LITTELFUSE

Description: Trans MOSFET N-CH Si 300V 82A 3-Pin(3+Tab) ISOPLUS 247

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PCB Footprints
IXFR140N30P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - ISOPLUS 247
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3D Models
IXFR140N30P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - ISOPLUS 247
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IXFR140N30P Details

  • Manufacturer Part Number:

    IXFR140N30P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    5000 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    300 V

  • Drain Current-Max (ID):

    70 A

  • Drain-source On Resistance-Max:

    0.026 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Qualification Status:

    Not Qualified

  • Reference Standard:

    UL RECOGNIZED

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFR140N30P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXFR140N30P is a 5-pin TO-220 package with a minimum pad size of 2.5mm x 2.5mm and a maximum pad size of 5mm x 5mm, with a 1.5mm hole for the center pin.
  • While the IXFR140N30P is rated for operation up to 150°C, it's recommended to derate the device's power handling capability by 20% for every 10°C above 100°C to ensure reliable operation.
  • To ensure reliability in high-vibration environments, it's recommended to use a secure mounting method, such as screwing or clipping, and to apply a thin layer of thermal interface material (TIM) to the device's heat sink.
  • The recommended gate drive voltage for IXFR140N30P is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, IXFR140N30P can be used in a parallel configuration, but it's essential to ensure that the devices are matched in terms of their electrical characteristics and that the gate drive signals are synchronized to prevent shoot-through currents.

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IXFR140N30P Overview

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Part Image IXFR140N30P IXYS Corporation

Power Field-Effect Transistor, 70A I(D), 300V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET