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IXFT96N20P - LITTELFUSE

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IXFT96N20P - LITTELFUSE  - 3D model
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IXFT96N20P Details

  • Manufacturer Part Number:

    IXFT96N20P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-268, 3/2 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.12

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    1500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    96 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    270 pF

  • JEDEC-95 Code:

    TO-268AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Pulsed Drain Current-Max (IDM):

    225 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXFT96N20P Frequently Asked Questions (FAQs)

  • The thermal resistance of the IXTH96N20P is typically around 1.5°C/W (junction-to-case) and 60°C/W (junction-to-ambient) at a maximum junction temperature of 150°C.
  • You can calculate the power dissipation, use the formula: Pd = (Vds x Ids) + (Vgs x Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
  • The recommended gate drive voltage for the IXTH96N20P is between 10V to 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IXTH96N20P is suitable for high-frequency switching applications up to 100 kHz, but you should ensure that the device is properly cooled and the switching losses are within the device's power dissipation rating.
  • The maximum allowed case temperature for the IXTH96N20P is 125°C, and the maximum junction temperature is 150°C.

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IXFT96N20P Overview

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