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IXFX120N65X2 - LITTELFUSE

Description: MOSFET MOSFET 650V/120A Ultra Junction X2

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IXFX120N65X2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PLUS247
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3D Models
IXFX120N65X2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - PLUS247
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IXFX120N65X2 Details

  • Manufacturer Part Number:

    IXFX120N65X2

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    120 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5.5 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    1250 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFX120N65X2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFX120N65X2 is a standard TO-220 package with a minimum pad size of 120 mils x 140 mils. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While the IXFX120N65X2 is a fast-switching IGBT, it's not optimized for high-frequency switching applications above 100 kHz. For high-frequency applications, it's recommended to use a dedicated high-frequency IGBT or MOSFET with a lower gate charge and optimized for high-frequency switching.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be mounted to the device using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the heat sink and avoid blocking the airflow with other components or obstacles.
  • The IXFX120N65X2 is designed to withstand voltage transients up to 650 V for a duration of 10 μs. However, it's recommended to limit the voltage transients to 600 V or less to ensure reliable operation and prevent damage to the device.
  • Yes, the IXFX120N65X2 can be used in a parallel configuration to increase current handling. However, it's essential to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.

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IXFX120N65X2 Overview

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