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IXFY30N25X3 - LITTELFUSE

Description: MOSFET DISCMSFT NCHULTRJNCTN X3CLASS

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PCB Footprints
IXFY30N25X3 - LITTELFUSE PCB footprint - Other - Other - TO-252 AA
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3D Models
IXFY30N25X3 - LITTELFUSE  - 3D model - Other - TO-252 AA
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IXFY30N25X3 Details

  • Manufacturer Part Number:

    IXFY30N25X3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    300 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    250 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-252

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    170 W

  • Pulsed Drain Current-Max (IDM):

    45 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXFY30N25X3 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXFY30N25X3 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXFY30N25X3 is suitable for high-frequency switching applications up to 100 kHz due to its low switching losses and fast switching times.
  • To ensure reliability in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking and ensuring good airflow around the device.
  • Yes, the IXFY30N25X3 can be paralleled to increase current handling, but it is recommended to ensure that the devices are properly matched and that the total current rating is not exceeded.
  • The recommended gate drive voltage for the IXFY30N25X3 is between 10V and 15V, with a maximum gate drive current of 1A.

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IXFY30N25X3 Overview

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