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IXGP12N120A3 - LITTELFUSE

Description: IGBT PT 1200 V 22 A 100 W Through Hole TO-220-3,3V @ 15V, 12A,-55°C ~ 150°C (TJ)

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PCB Footprints
IXGP12N120A3 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220  Outline
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3D Models
IXGP12N120A3 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-220  Outline
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IXGP12N120A3 Details

  • Manufacturer Part Number:

    IXGP12N120A3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China, Philippines, South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.35

  • Additional Feature:

    LOW CONDUCTION LOSS

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    22 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE

  • Gate-Emitter Thr Voltage-Max:

    5 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    100 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    1545 ns

  • Turn-on Time-Nom (ton):

    202 ns

  • VCEsat-Max:

    3 V

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IXGP12N120A3 Overview

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