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IXTA130N10T - LITTELFUSE

Description: MOSFET N-CH 100V 130A TO-263

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PCB Footprints
IXTA130N10T - LITTELFUSE PCB footprint - Other - Other - TO-263HV *
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3D Models
IXTA130N10T - LITTELFUSE  - 3D model - Other - TO-263HV *
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IXTA130N10T Details

  • Manufacturer Part Number:

    IXTA130N10T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.9

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    130 A

  • Drain-source On Resistance-Max:

    0.0091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    95 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Pulsed Drain Current-Max (IDM):

    350 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA130N10T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTA130N10T is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • While the IXTA130N10T is a fast-switching thyristor, it's not recommended for high-frequency switching applications above 1 kHz. The device is optimized for low-frequency switching applications, and high-frequency operation may lead to reduced performance, increased losses, and potential reliability issues.
  • To ensure proper snubbing, use a snubber circuit consisting of a resistor (Rsn) and capacitor (Csn) in series, connected between the anode and cathode of the IXTA130N10T. The recommended values are Rsn = 10-20 ohms and Csn = 10-20 nF. This will help to reduce overvoltage and ringing, ensuring reliable operation and preventing damage to the device.
  • The maximum allowed case temperature for the IXTA130N10T is 125°C. Operating the device above this temperature may lead to reduced performance, increased thermal resistance, and potential reliability issues. Ensure proper heat sinking and thermal management to maintain a safe operating temperature.
  • While it's technically possible to use multiple IXTA130N10T devices in parallel, it's not recommended due to potential current imbalance and thermal runaway issues. Instead, consider using a single device with a higher current rating or exploring alternative solutions that can handle the required current.

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