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IXTA200N055T2 - LITTELFUSE

Description: N-Channel 55 V 200A (Tc) 360W (Tc) Surface Mount TO-263AA

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PCB Footprints
IXTA200N055T2 - LITTELFUSE PCB footprint - Other - Other - TO-263_Thickness=4.7mm
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3D Models
IXTA200N055T2 - LITTELFUSE  - 3D model - Other - TO-263_Thickness=4.7mm
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IXTA200N055T2 Details

  • Manufacturer Part Number:

    IXTA200N055T2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    600 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    200 A

  • Drain-source On Resistance-Max:

    0.0042 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    228 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    360 W

  • Pulsed Drain Current-Max (IDM):

    500 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTA200N055T2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA200N055T2 is a TO-220 package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the PCB layout guidelines provided in the datasheet or application notes.
  • While IXTA200N055T2 has a high junction temperature rating of 150°C, it's essential to consider the thermal management and derating factors when operating in high-temperature environments. Ensure proper heat sinking and follow the thermal derating curves provided in the datasheet to avoid overheating and ensure reliable operation.
  • The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a gate resistor value between 10Ω to 100Ω. However, it's recommended to consult the application notes or contact Littelfuse support for specific guidance on selecting the optimal gate resistor value for your design.
  • IXTA200N055T2 is a standard MOSFET device, and its compatibility with a specific gate driver IC depends on the gate driver's output voltage, current, and impedance. Ensure the gate driver IC can provide the required voltage and current to drive the MOSFET, and consult the datasheet or application notes for specific guidance on compatibility and interface requirements.
  • IXTA200N055T2 is a sensitive semiconductor device and requires proper ESD protection and handling precautions to avoid damage. Follow standard ESD handling procedures, such as using an ESD wrist strap, mat, or workstation, and ensure all equipment and tools are properly grounded. Avoid touching the device's pins or handling it in a way that could generate static electricity.

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IXTA200N055T2 Overview

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Part Image IXTA200N055T2 IXYS Corporation

Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB