- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IXTA36N30P
- Part Number IXTA36N30P
- Manufacturer LITTELFUSE
- Pin Count 3
- Part Category MOSFET (N-Channel)
- Package Category Other
- Footprint Name Other - IXTA36N30P-2
- Released Date Sep 6, 2020
- Last Modified Date Aug 13, 2025 10:37 AM UTC
- Pinout / Pin List Click Here (Member Only)
IXTA36N30P Details
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Manufacturer Part Number:
IXTA36N30P
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Rohs Code:
Yes
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Part Life Cycle Code:
Active
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ECCN Code:
EAR99
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Manufacturer:
Littelfuse Inc
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YTEOL:
6
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Additional Feature:
AVALANCHE RATED
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Avalanche Energy Rating (Eas):
1000 mJ
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Case Connection:
DRAIN
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
300 V
IXTA36N30P Frequently Asked Questions (FAQs)
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The recommended PCB footprint for IXTA36N30P is a TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
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While IXTA36N30P is a power MOSFET, it is not optimized for high-frequency switching applications. It has a relatively high gate charge and output capacitance, which may lead to high switching losses. For high-frequency applications, consider using a MOSFET with lower gate charge and output capacitance.
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To ensure the reliability of IXTA36N30P in a high-temperature environment, follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and keeping the junction temperature below the maximum rated value of 150°C.
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Yes, you can parallel multiple IXTA36N30P devices to increase current handling, but ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents.
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The safe operating area (SOA) for IXTA36N30P is not explicitly stated in the datasheet, but it can be estimated based on the device's voltage and current ratings. As a general rule, operate the device within the boundaries of Vds = 30V, Id = 36A, and Pd = 100W to ensure reliable operation.
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IXTA36N30P Overview
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