Part Image

IXTA3N100D2 - LITTELFUSE

Description: MOSFET N-CH MOSFETS (D2) 1000V 3A

Download IXTA3N100D2 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IXTA3N100D2 - LITTELFUSE  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IXTA3N100D2 Details

  • Manufacturer Part Number:

    IXTA3N100D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain-source On Resistance-Max:

    6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JEDEC-95 Code:

    TO-263AA

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA3N100D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA3N100D2 is a standard TO-252 (D-PAK) package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, IXTA3N100D2 is rated for operation up to 150°C junction temperature, but it's recommended to derate the device's power handling capability at higher temperatures to ensure reliable operation.
  • To ensure reliability in high-vibration environments, it's recommended to use a secure mounting method, such as screwing or adhesive, and to follow proper PCB design and assembly guidelines to minimize mechanical stress on the device.
  • Yes, IXTA3N100D2 can be used in a parallel configuration to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB design and layout are optimized to minimize current imbalance and thermal issues.
  • The recommended gate drive voltage for IXTA3N100D2 is between 10V and 15V, with a minimum gate drive current of 1A to ensure reliable switching.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IXTA3N100D2 Overview

Use the download button to access the IXTA3N100D2 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IXTA3, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IXTA3N100D2

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview