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IXTA64N10L2 - LITTELFUSE

Description: 1-Trans MOSFET N-CH 100V 64A

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PCB Footprints
IXTA64N10L2 - LITTELFUSE PCB footprint - Other - Other - IXTA64N10L2-3
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IXTA64N10L2 - LITTELFUSE  - 3D model - Other - IXTA64N10L2-3
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IXTA64N10L2 Details

  • Manufacturer Part Number:

    IXTA64N10L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5.85

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    64 A

  • Drain-source On Resistance-Max:

    0.032 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    235 pF

  • JEDEC-95 Code:

    TO-263AB

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    357 W

  • Pulsed Drain Current-Max (IDM):

    140 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTA64N10L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTA64N10L2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm. It's recommended to follow the manufacturer's recommended land pattern to ensure proper thermal performance and reliability.
  • While IXTA64N10L2 is a fast-switching thyristor, it's not recommended for high-frequency switching applications above 1 kHz due to its relatively high switching losses and limited dv/dt capability. For high-frequency applications, consider using a more specialized device designed for high-frequency switching, such as an IGBT or MOSFET.
  • To ensure reliable operation of IXTA64N10L2 in a high-temperature environment, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and ensuring good airflow around the device. Additionally, consider derating the device's current and voltage ratings according to the manufacturer's recommended temperature derating curves.
  • While it's technically possible to use IXTA64N10L2 in a parallel configuration, it's not recommended due to the device's relatively high voltage drop and limited current sharing capability. Instead, consider using a single device with a higher current rating or using multiple devices in a series configuration to achieve the desired current handling.
  • The recommended gate drive circuitry for IXTA64N10L2 typically consists of a gate driver IC, such as a UCC37322 or a dedicated thyristor gate driver, along with a current-limiting resistor and a voltage-clamping diode. The gate drive circuitry should be designed to provide a fast rise time, high current capability, and protection against overvoltage and overcurrent conditions.

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IXTA64N10L2 Overview

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