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IXTB30N100L - LITTELFUSE

Description: DiscMosfet N-CH Linear Std TO-264(3) / TUBE

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Symbol
IXTB30N100L - LITTELFUSE - PCB symbol
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PCB Footprints
IXTB30N100L - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IXBK55N300
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3D Models
IXTB30N100L - LITTELFUSE - 3D model - Transistor Outline, Vertical - IXBK55N300
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IXTB30N100L Details

  • Manufacturer Part Number:

    IXTB30N100L

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1000 V

  • Drain Current-Max (ID):

    30 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    115 pF

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    800 W

  • Pulsed Drain Current-Max (IDM):

    70 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTB30N100L Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTB30N100L is a standard TO-220 package with a minimum pad size of 70 mil x 70 mil and a thermal pad size of 100 mil x 100 mil.
  • While IXTB30N100L is a fast-switching IGBT, it's not recommended for high-frequency switching applications above 50 kHz due to its relatively high switching losses. For high-frequency applications, consider using a dedicated high-frequency IGBT or MOSFET.
  • To ensure reliable operation of IXTB30N100L in a high-temperature environment, make sure to follow the recommended thermal management guidelines, including using a heat sink with a thermal resistance of ≤ 1°C/W, and ensuring good airflow around the device.
  • Yes, you can parallel multiple IXTB30N100L devices to increase current handling, but it's essential to ensure that each device has its own gate resistor and that the gate signals are properly synchronized to prevent shoot-through currents.
  • The recommended gate drive voltage for IXTB30N100L is between 10 V and 15 V, with a maximum gate-source voltage of ±20 V.

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IXTB30N100L Overview

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