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IXTF1N250 - LITTELFUSE

Description: MOSFET 2500V 1A HV Power MOSFET

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Symbol
IXTF1N250 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTF1N250 - LITTELFUSE PCB footprint - Other - Other - ISOPLUS i4-PakTM (HV) Outline
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3D Models
IXTF1N250 - LITTELFUSE - 3D model - Other - ISOPLUS i4-PakTM (HV) Outline
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IXTF1N250 Details

  • Manufacturer Part Number:

    IXTF1N250

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    2500 V

  • Drain Current-Max (ID):

    1 A

  • Drain-source On Resistance-Max:

    40 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    23 pF

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    110 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTF1N250 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTF1N250 is a standard SOT-23 package with a minimum pad size of 0.8mm x 0.8mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, IXTF1N250 is rated for operation up to 150°C, making it suitable for high-temperature applications. However, it's essential to ensure that the device is properly derated for temperature to avoid thermal runaway.
  • To ensure reliability in high-voltage applications, it's crucial to follow proper PCB design and layout guidelines, including maintaining a safe creepage distance, using a suitable PCB material, and ensuring proper clearance and spacing between components.
  • Yes, IXTF1N250 can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB design can handle the increased current. Additionally, it's recommended to consult with a thermal expert to ensure that the devices are properly derated for temperature.
  • It's recommended to store IXTF1N250 in a dry, cool place, away from direct sunlight and moisture. When handling the devices, it's essential to use anti-static wrist straps, mats, or other ESD protection methods to prevent damage from electrostatic discharge.

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IXTF1N250 Overview

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