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IXTF1N450 - LITTELFUSE

Description: MOSFET N-CH 4500V 0.9A I4PAK

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PCB Footprints
IXTF1N450 - LITTELFUSE PCB footprint - Other - Other - IXTF02N450-2
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3D Models
IXTF1N450 - LITTELFUSE  - 3D model - Other - IXTF02N450-2
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IXTF1N450 Details

  • Manufacturer Part Number:

    IXTF1N450

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    I4PAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6.2

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    4500 V

  • Drain Current-Max (ID):

    0.9 A

  • Drain-source On Resistance-Max:

    85 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    165 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTF1N450 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTF1N450 is a standard SOT-227 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, IXTF1N450 is a high-reliability device that meets the requirements of AEC-Q101, making it suitable for use in automotive and other high-reliability applications.
  • To ensure the thermal performance of IXTF1N450, it is recommended to use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and to ensure good thermal contact between the device and the heat sink.
  • The maximum allowed voltage transient for IXTF1N450 is 450V, but it is recommended to limit the voltage transient to 400V to ensure reliable operation.
  • Yes, IXTF1N450 can be used in a parallel configuration to increase the current handling capability, but it is recommended to ensure that the devices are matched in terms of their electrical characteristics and thermal performance.

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