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IXTH10N100D2 - LITTELFUSE

Description: MOSFET DiscMosfet N-CH Depl Mode-D2 TO-247AD

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PCB Footprints
IXTH10N100D2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
IXTH10N100D2 - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247
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IXTH10N100D2 Details

  • Manufacturer Part Number:

    IXTH10N100D2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Drain Current-Max (ID):

    10 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    70 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    695 W

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTH10N100D2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH10N100D2 is a TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXTH10N100D2 is rated for operation up to 150°C, but it's recommended to derate the power dissipation above 125°C to ensure reliable operation.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. A thermal interface material (TIM) can also be used to improve heat transfer between the device and heat sink.
  • The IXTH10N100D2 has a maximum surge current rating of 100A for 10ms, but it's recommended to limit the surge current to 50A for 10ms to ensure reliable operation.
  • Yes, the IXTH10N100D2 is suitable for high-frequency switching applications up to 100kHz, but it's recommended to evaluate the device's performance in the specific application to ensure it meets the required specifications.

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IXTH10N100D2 Overview

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Part Image IXTH10N100D2 IXYS Corporation

Power Field-Effect Transistor, 10A I(D), 1000V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IXTH10N100D IXYS Corporation

Power Field-Effect Transistor, 10A I(D), 1000V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IXTH10N100D Littelfuse Inc

Power Field-Effect Transistor, 10A I(D), 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247