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IXTH110N10L2 - LITTELFUSE

Description: Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-247AD

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Symbol
IXTH110N10L2 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTH110N10L2 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXTH) Outline
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3D Models
IXTH110N10L2 - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247 (IXTH) Outline
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IXTH110N10L2 Details

  • Manufacturer Part Number:

    IXTH110N10L2

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    3000 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    110 A

  • Drain-source On Resistance-Max:

    0.018 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    600 W

  • Pulsed Drain Current-Max (IDM):

    300 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

IXTH110N10L2 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH110N10L2 is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper heat dissipation and to prevent thermal issues.
  • To ensure proper cooling, it's recommended to attach a heat sink to the device. The heat sink should have a thermal resistance of less than 10°C/W. Additionally, ensure good airflow around the device and avoid blocking the airflow with other components or obstacles.
  • The maximum allowed case temperature for the IXTH110N10L2 is 150°C. Exceeding this temperature can lead to device failure or reduced lifespan. It's essential to ensure the device operates within the recommended temperature range to ensure reliability and performance.
  • Yes, the IXTH110N10L2 is suitable for high-reliability applications. It's built with high-quality materials and undergoes rigorous testing to ensure its performance and reliability. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To prevent electrostatic discharge (ESD) damage, handle the IXTH110N10L2 with ESD-protective equipment, such as wrist straps or mats. Ensure the workspace is ESD-protected, and avoid touching the device's pins or leads with bare hands.

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IXTH110N10L2 Overview

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