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IXTH160N10T - LITTELFUSE

Description: MOSFET 160 Amps 100V 6.9 Rds TrenchMVTM N-Channel Enhancement Mode Avalanche Rated

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Symbol
IXTH160N10T - LITTELFUSE - PCB symbol
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PCB Footprints
IXTH160N10T - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 AD
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3D Models
IXTH160N10T - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247 AD
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IXTH160N10T Details

  • Manufacturer Part Number:

    IXTH160N10T

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, ULTRA LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    160 A

  • Drain-source On Resistance-Max:

    0.007 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    135 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    430 W

  • Pulsed Drain Current-Max (IDM):

    430 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH160N10T Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH160N10T is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • To ensure reliable operation in high-temperature environments, it is recommended to follow proper thermal management practices, such as providing adequate heat sinking, using a thermal interface material, and ensuring good airflow around the device.
  • The maximum allowed voltage transient for the IXTH160N10T is 400V, as specified in the datasheet. Exceeding this value may damage the device.
  • Yes, the IXTH160N10T can be used in a parallel configuration to increase current handling, but it is recommended to ensure that the devices are properly matched and that the current sharing is balanced to avoid overheating and reduce reliability.
  • The recommended gate drive voltage for the IXTH160N10T is 10-15V, as specified in the datasheet. Using a higher gate drive voltage may improve switching performance, but it may also increase power consumption and reduce reliability.

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IXTH160N10T Overview

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