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IXTH16P60P - LITTELFUSE

Description: Trans MOSFET P-CH 600V 16A 3-Pin(3+Tab) TO-247AD

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PCB Footprints
IXTH16P60P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247
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3D Models
IXTH16P60P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247
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IXTH16P60P Details

  • Manufacturer Part Number:

    IXTH16P60P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    16 A

  • Drain-source On Resistance-Max:

    0.72 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH16P60P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH16P60P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXTH16P60P can be used in high-frequency applications up to 100 kHz, but it's essential to consider the device's switching characteristics, parasitic inductance, and capacitive losses to ensure optimal performance.
  • To ensure proper cooling, provide a sufficient heat sink with a thermal resistance of ≤ 1°C/W, and ensure good thermal contact between the device and the heat sink. Also, consider the maximum junction temperature (Tj) of 150°C and the thermal derating curve.
  • The recommended gate drive voltage for the IXTH16P60P is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can improve switching performance, but be cautious of gate oxide breakdown.
  • Yes, the IXTH16P60P can be paralleled for higher current applications, but it's crucial to ensure that the devices are matched in terms of threshold voltage, transconductance, and switching characteristics to prevent uneven current sharing and potential oscillations.

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IXTH16P60P Overview

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