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IXTH1N250 - LITTELFUSE

Description: N-Channel 2500 V 1.5A (Tc) Through Hole TO-247AD Rds On (Max) @ Id, Vgs 40Ohm @ 750mA, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 25 V

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Symbol
IXTH1N250 - LITTELFUSE - PCB symbol
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PCB Footprints
IXTH1N250 - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXTH)_2024
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3D Models
IXTH1N250 - LITTELFUSE - 3D model - Transistor Outline, Vertical - TO-247 (IXTH)_2024
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IXTH1N250 Details

  • Manufacturer Part Number:

    IXTH1N250

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    2500 V

  • Drain Current-Max (ID):

    1.5 A

  • Drain-source On Resistance-Max:

    40 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247AD

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

IXTH1N250 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for IXTH1N250 is a standard SOT-223 package with a minimum pad size of 2.5mm x 2.5mm and a thermal pad size of 3.5mm x 3.5mm.
  • Yes, IXTH1N250 can be used in high-frequency applications up to 1MHz, but it's essential to consider the device's parasitic inductance and capacitance to ensure proper performance.
  • To ensure reliability in high-temperature environments, it's crucial to follow proper thermal management practices, such as providing adequate heat sinking and ensuring the device operates within its specified temperature range (up to 150°C).
  • IXTH1N250 can handle surge currents up to 250A for 10ms, but it's essential to consider the device's thermal limitations and ensure proper heat sinking to prevent overheating.
  • Yes, IXTH1N250 can be used in parallel to increase current handling, but it's essential to ensure that the devices are properly matched and that the PCB layout is designed to minimize current imbalance and thermal gradients.

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IXTH1N250 Overview

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