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IXTH20P50P - LITTELFUSE

Description: Trans MOSFET P-CH 500V 20A 3-Pin(3+Tab) TO-247AD

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PCB Footprints
IXTH20P50P - LITTELFUSE PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-247 (IXXH)
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3D Models
IXTH20P50P - LITTELFUSE  - 3D model - Transistor Outline, Vertical - TO-247 (IXXH)
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IXTH20P50P Details

  • Manufacturer Part Number:

    IXTH20P50P

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    2500 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.45 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    460 W

  • Pulsed Drain Current-Max (IDM):

    60 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH20P50P Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH20P50P is a standard TO-220 package with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.
  • Yes, the IXTH20P50P is rated for operation up to 150°C, but it's recommended to derate the current and voltage ratings according to the temperature derating curve provided in the datasheet.
  • To ensure reliability, follow proper handling and storage procedures, use a clean and dry environment, and avoid exceeding the recommended operating conditions. Also, consider using a thermally conductive interface material and a heat sink to reduce thermal stress.
  • Yes, the IXTH20P50P is suitable for high-frequency switching applications up to 100 kHz, but it's essential to consider the device's switching characteristics, such as turn-on and turn-off times, and ensure that the application's switching frequency is within the device's capabilities.
  • Use proper handling and storage procedures, and consider adding EOS and ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design to protect the IXTH20P50P from electrical overstress and electrostatic discharge.

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IXTH20P50P Overview

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