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IXTH2N300P3HV - LITTELFUSE

Description: MOSFET MSFT N-CH STD-POLAR3

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IXTH2N300P3HV - LITTELFUSE  - 3D model
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IXTH2N300P3HV Details

  • Manufacturer Part Number:

    IXTH2N300P3HV

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Manufacturer:

    Littelfuse Inc

  • YTEOL:

    6

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    3000 V

  • Drain Current-Max (ID):

    2 A

  • Drain-source On Resistance-Max:

    21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    42 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    520 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IXTH2N300P3HV Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the IXTH2N300P3HV is a TO-220AB package with a minimum pad size of 4.5mm x 4.5mm and a thermal pad size of 2.5mm x 2.5mm. It's essential to follow the recommended footprint to ensure proper thermal performance and to prevent overheating.
  • To ensure proper cooling, it's recommended to provide a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be attached to the device using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K. Additionally, ensure good airflow around the device and heat sink to prevent hot spots.
  • The maximum allowed case temperature for the IXTH2N300P3HV is 150°C. Operating the device above this temperature can reduce its lifespan and affect its performance. It's essential to ensure that the device is properly cooled to maintain a case temperature below 150°C.
  • Yes, the IXTH2N300P3HV is suitable for high-reliability applications. It's designed and manufactured to meet the requirements of AEC-Q101, which ensures that the device can withstand the harsh conditions found in automotive and industrial applications.
  • To protect the IXTH2N300P3HV from EOS, it's recommended to use a transient voltage suppressor (TVS) or a metal-oxide varistor (MOV) in parallel with the device. This will help to absorb voltage spikes and prevent damage to the device. Additionally, ensure that the device is operated within its recommended voltage and current ratings.

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IXTH2N300P3HV Overview

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